Methods of thin film process
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United States of America Patent
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May 10, 2011
Grant Date -
Jul 31, 2008
app pub date -
Nov 29, 2007
filing date -
Dec 7, 2006
priority date (Note) -
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Abstract
A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
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