Analog capacitor and method of manufacturing the same
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United States of America Patent
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Mar 16, 2010
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app pub date -
Jul 22, 2005
filing date -
Jul 28, 2004
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Abstract
An analog capacitor capable of reducing the influence of an applied voltage on a capacitance and a method of manufacturing the analog capacitor are provided. The analog capacitor includes a lower electrode which is formed on a substrate, a multi-layered dielectric layer which includes at least one oxide layer and at least one oxynitride layer which are formed of a material selected from the group consisting of Hf, Al, Zr, La, Ba, Sr, Ti, Pb, Bi and a combination thereof and is formed on the lower electrode, and an upper electrode which is formed on the multi-layered dielectric layer.
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