Cutting thin layer(s) from semiconductor material(s)
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United States of America Patent
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Oct 4, 2005
Issued Date -
N/A
app pub date -
Oct 11, 2002
filing date -
Apr 14, 2000
priority date (Note) -
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Abstract
A method of cutting at least one thin layer from a substrate or ingot forming element for an electronic or optoelectronic or optical component or sensor. This method includes the steps of forming a weakened zone in the substrate or ingot forming element, wherein the weakened zone has a thickness that corresponds to that of the layer that is to be removed; and directing a pulse of energy into the substrate or forming element wherein the pulse has a duration shorter than or of the same order as that needed by a sound wave to pass through the thickness of the weakened zone. The energy of the pulse is sufficient to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein.
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