Image sensor and a method for manufacturing the same
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United States of America Patent
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May 31, 2011
Grant Date -
Mar 5, 2009
app pub date -
Aug 28, 2008
filing date -
Aug 30, 2007
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An image sensor and manufacturing method thereof are provided. An insulating layer having a wiring can be provided on a semiconductor substrate. A barrier wiring can be provided in the insulating layer between the wiring of a unit pixel and an adjacent wiring of an adjacent pixel. A device isolating pattern can be provided on the barrier wiring, and a lower electrode can be provided on the insulating layer and the wiring. A photodiode can be provided on the lower electrode, and an upper electrode can be provided on the photodiode.
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