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Abstract

A semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of steps of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction. In an optical pickup device using a semiconductor laser as a light source thereof, the semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction. In an optical record and/or reproducing apparatus using semiconductor laser as a light source thereof, the semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of steps of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction.

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