Split gate (SG) memory device and novel methods of making the SG-memory device

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United States of America Patent

PATENT NO 11450678
APP PUB NO 20210151451A1
SERIAL NO

16683439

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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One illustrative integrated circuit (IC) product disclosed herein includes a selection gate electrode and a first gate insulation layer positioned above a substrate and a memory gate electrode positioned above the substrate and adjacent the selection gate electrode, wherein the memory gate electrode comprises a bottom surface and first and second opposing sidewall surfaces. This embodiment of the IC product also includes a plurality of layers of insulating material, wherein a first portion of the layers of insulating material is positioned between the first gate insulation layer and the first opposing sidewall of the memory gate electrode, a second portion of the layers of insulating material is positioned between the bottom surface of the memory gate electrode and the upper surface of the semiconductor substrate, and a third portion of the layers of insulating material is positioned on the second opposing sidewall of the conductive memory gate electrode.

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Patent Owner(s)

  • GLOBALFOUNDRIES U.S. INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pandey, Shesh Mani Saratoga Springs, US 83 202
Xie, Ruilong Niskayuna, US 1423 10722
Zang, Hui Guilderland, US 447 2181

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