Piezoelectric thin film resonator and manufacturing method thereof

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United States of America Patent

PATENT NO 8776334
APP PUB NO 20080178444A1
SERIAL NO

12053883

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of manufacturing a piezoelectric thin film resonator which can reduce variations in resonant frequency and resonant resistance by uniformly planarizing a structural film. The method of manufacturing the piezoelectric thin film resonator includes the steps of forming sacrifice layer patterns on an upper surface of a mother substrate; forming a dielectric film on the sacrifice layer patterns; processing a surface of the dielectric film by a plasma treatment; forming vibration portions on the dielectric film, the vibration portions each being composed of two excitation electrodes and a piezoelectric thin film provided therebetween; etching the sacrifice layer patterns; and cutting the mother substrate into separate piezoelectric thin film resonators.

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Patent Owner(s)

  • MURATA MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujii, Hidetoshi Ishikawa-ken, JP 96 1189
Kubo, Ryuichi Ishikawa-ken, JP 17 382

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