Reticle having an interleave kerf
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United States of America Patent
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Aug 20, 2002
Grant Date -
Jun 13, 2002
app pub date -
Dec 8, 2000
filing date -
Dec 8, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
This invention includes a reticle used for making a semiconductor device in a photolithography process. The reticle has a device exposure region having sides and a device pattern within an area defined by the sides, an opaque chrome region disposed adjacent to the device region, and a kerf region surrounded by the opaque chrome region, the kerf region being offset from the sides of the device exposure region by the opaque chrome region. The reticle should facilitate a double exposure method of a photolithography process by interleaving adjacent exposures of a wafer during the photolithography process, while allowing the single exposure of the respective kerfs.
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