Carbon-doped silicon single crystal wafer and method for manufacturing the same

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United States of America Patent

PATENT NO 11761118
APP PUB NO 20220259767A1
SERIAL NO

17619516

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A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

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Patent Owner(s)

  • SHIN-ETSU HANDOTAI CO LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Igawa, Shizuo Annaka, JP 4 1
Qu, Weifeng Takasaki, JP 5 48
Sunakawa, Ken Annaka, JP 4 15

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