Power semiconductor devices having gate trenches and buried edge terminations and related methods
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United States of America Patent
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Dec 5, 2023
Grant Date -
Apr 1, 2021
app pub date -
Nov 19, 2020
filing date -
Dec 8, 2016
priority date (Note) -
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Abstract
Semiconductor devices include a semiconductor layer structure comprising a drift region that includes a wide band-gap semiconductor material. A shielding pattern is provided in an upper portion of the drift region in an active region of the device and a termination structure is provided in the upper portion of the drift region in a termination region of the device. A gate trench extends into an upper surface of the semiconductor layer structure. The semiconductor layer structure includes a semiconductor layer that extends above and at least partially covers the termination structure.
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