Importance

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Abstract

Semiconductor light-emitting elements are produced by providing a wafer substrate of GaP, epitaxially growing on this substrate a semiconductor layered structure including an n-type layer and a p-type layer of GaP for providing a light-emitting layer, forming top electrodes on the semiconductor layered structure each over a portion of the area corresponding to one of the chips into which the substrate is to be later divided, forming a bottom electrode on the bottom surface of the substrate, dicing the wafer substrate into the individual chips, and thereafter carrying out a surface-roughening process on externally exposed portions of the semiconductor structure by means of hydrochloric acid. Each of the top electrodes is of a three-layer structure with a contact metal layer which may be of an alloy of Au and makes an ohmic contact with the GaP of the semiconductor layered structure, a Mo layer on the contact metal layer and an Au layer on the Mo layer.

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First Claim