Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect
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United States of America Patent
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Nov 19, 2002
Grant Date -
Feb 14, 2002
app pub date -
Aug 20, 2001
filing date -
Jun 8, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
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