Magnetic sensing element biased by two antiferromagnetic layers above free magnetic layer and two hard bias layers at two sides of the free magnetic layer, and method for making the same
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United States of America Patent
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Feb 21, 2006
Grant Date -
Jan 15, 2004
app pub date -
May 13, 2003
filing date -
May 14, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A magnetic sensing element comprising a stably magnetized free magnetic layer is provided. Hard bias layers are disposed at the two sides of the free magnetic layer, and a third antiferromagnetic layer is disposed on the free magnetic layer. Side regions of the free magnetic layer extending beyond the track width are overlaid by second antiferromagnetic layers with the third antiferromagnetic layer therebetween. The magnetization directions of the side regions of the free magnetic layer are pinned in the track width direction by a synergetic effect of the exchange coupling magnetic fields generated between the side regions of the free magnetic layer and the third antiferromagnetic layer and the longitudinal bias magnetic fields from the hard bias layers.
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