Protecting circuit for a semiconductor circuit
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United States of America Patent
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-
Nov 2, 1999
Grant Date -
N/A
app pub date -
Jun 8, 1998
filing date -
Jun 9, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A protecting circuit is disclosed, that comprises a static electricity protecting means composed of a plurality of p channel type transistors, wherein a source electrode, a gate electrode, and a substrate electrode of a first p channel type transistor are connected to a high voltage power supply terminal, a drain electrode of a second p channel type MOS transistor being connected to a low voltage power supply terminal, a substrate electrode of the second p channel type substrate being connected to the high voltage power supply terminal, a drain electrode of the first p channel type transistor, a source electrode and a gate electrode of the second p channel type MOS transistor being connected to an external terminal and an internal circuit in common.
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