Uniformity tuning of variable-height features formed in trenches

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United States of America Patent

PATENT NO 10332963
SERIAL NO

15882031

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Abstract

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Methods of forming a structure for a field-effect transistor and related structures. A trench is formed in one or more semiconductor layers, and forming first and second sacrificial sidewall spacers are formed on an upper portion of the trench. A material is formed in the trench that is arranged in part between the first sacrificial sidewall spacer and the second sacrificial space. After forming the material in the trench, the first and second sacrificial sidewall spacers are removed. After removing the first and second sacrificial sidewall spacers, an upper portion of the material is removed with an isotropic etching process.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Xie, Ruilong Niskayuna, US 1447 10827

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