Metal oxide and transistor including metal oxide

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United States of America Patent

PATENT NO 11923423
APP PUB NO 20220293739A1
SERIAL NO

17825209

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Abstract

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A novel metal oxide is provided. One embodiment of the present invention is a crystalline metal oxide. The metal oxide includes a first layer and a second layer; the first layer has a wider bandgap than the second layer; the first layer and the second layer form a crystal lattice; and in the case where a carrier is excited in the metal oxide, the carrier is transferred through the second layer. Furthermore, the first layer contains an element M (M is one or more selected from Al, Ga, Y, and Sn) and Zn, and the second layer contains In.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamazaki, Shunpei Setagaya, JP 7307 227749

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