Method for temperature measurement using dopant segregation into titanium silicide
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United States of America Patent
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Jun 26, 2001
Grant Date -
N/A
app pub date -
Jun 8, 1999
filing date -
Jun 8, 1999
priority date (Note) -
Expired
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Abstract
A method of measuring temperature of momentary anneals in the temperature range of around 900.degree. C. is disclosed. The method comprises the steps of providing a substrate of doped polysilicon or single crystal silicon, applying a blocking layer on a portion of the substrate, selectively forming silicide on the substrate adjacent opposite ends of the blocking layer to define a resistor, subjecting the resistor to a momentary anneal in the temperature range around 900.degree. C., and measuring interfacial resistance between the silicide and the substrate after the annealing step, the resistance correlating to anneal temperature.
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