Method of forming an embedded flash memory device
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United States of America Patent
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Jun 6, 2006
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N/A
app pub date -
Jun 3, 2004
filing date -
Jun 5, 2003
priority date (Note) -
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Abstract
A method of fabricating an embedded flash memory device. A substrate having a memory area is provided. A device is formed on the substrate in the memory area. A conductive layer is formed over the substrate to cover the device in the memory area. A conformal insulating layer is formed on the conductive layer and the substrate. The insulating layer is removed at an edge of the memory area. By anisotropic etching, the insulating layer and part of the conductive layer is removed to form a control gate on the sidewall of the device. Thus, polysilicon residue caused by the conventional control gate process does not occur.
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