Semiconductor structure

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United States of America Patent

PATENT NO 11784090
APP PUB NO 20220277992A1
SERIAL NO

17744434

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The semiconductor structure includes a substrate; a dielectric layer formed on the substrate; an opening, formed through the dielectric layer; a contact layer formed at bottom of the opening; a blocking layer formed on a sidewall surface of the opening; and a plug formed in the opening. The plug is formed on a sidewall surface of the blocking layer and in contact with the contact layer.

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Patent Owner(s)

  • SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jing, Xuezhen Shanghai, CN 6 1
Tan, Jingjing Shanghai, CN 7 12
Xiao, Zhangru Shanghai, CN 3 0
Xu, Zengsheng Shanghai, CN 3 0
Zhang, Hao Shanghai, CN 1008 4879
Zhang, Tiantian Shanghai, CN 36 95

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