Optical proximity correction verification mask
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United States of America Patent
Stats
-
Aug 5, 2003
Grant Date -
Mar 6, 2003
app pub date -
Aug 29, 2001
filing date -
Aug 29, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An optical proximity correction (OPC) verification mask is disclosed. The mask includes device areas that are separated by scribe lines. One or more OPC test patterns are integrated into the scribe lines for verification purposes. These patterns can include: line-end shortening (LES) patterns, such as serifs and hammerheads added to the ends of lines; corner rounding patterns, such as positive and negative serifs; and, scattering bars (SB's) and anti-scattering bars (ASB's) to compensate for isolated-dense proximity effects and isolated-feature depth of focus reduction. Other OPC patterns may also be included. A method for making the mask, and a semiconductor device created at least in part by a method including use of the mask, are also disclosed.
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