GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly
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United States of America Patent
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May 1, 2012
Grant Date -
Dec 13, 2007
app pub date -
Sep 8, 2006
filing date -
Sep 13, 2005
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Abstract
A GaN-based semiconductor light-emitting device includes (A) a first GaN-based compound semiconductor layer 13 having n-type conductivity, (B) an active layer 15 having a multi-quantum well structure including well layers and barrier layers for separating between the well layers, and (C) a second GaN-based compound semiconductor layer 17 having p-type conductivity. The well layers are disposed in the active layer 15 so as to satisfy the relation d1
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