Self-aligned contact for MOS processing
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United States of America Patent
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Jan 3, 1989
Grant Date -
N/A
app pub date -
May 12, 1987
filing date -
May 12, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for manufacturing an insulated gate field effect semiconductor device having self-aligned contact regions. The process avoids the need for a masking step for the application of interconnecting contacts by providing a dielectric material having a low melting point over the gate region of the semiconductor. The dielectric material is heated to its melting point such that it covers and encapsulates the gate. Contact material is then subsequently provided using the self-alignment feature of the melted dielectric which isolates the gate from the contacts.
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