Laser diode
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United States of America Patent
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Apr 6, 2010
Grant Date -
Sep 25, 2008
app pub date -
Mar 17, 2008
filing date -
Mar 22, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.
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