Magnetic tunnel junction memory cell with a buffer-layer and methods for forming the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 12, 2023
Grant Date -
N/A
app pub date -
Oct 19, 2020
filing date -
Oct 19, 2020
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A memory cell structure including a dielectric cap layer disposed over a substrate and a first dielectric layer disposed over the dielectric cap layer. The memory cell structure may further include a buffer layer disposed over the first dielectric layer, a connection via structure embedded in the buffer layer, the first dielectric layer, and the dielectric cap layer. The memory cell structure may further include may further include a bottom electrode disposed on the connection via structure and the buffer layer, and a magnetic tunnel junction (MTJ) memory cell including one or more MTJ layers disposed on the bottom electrode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully