Method of manufacturing a thin film transistor using anodic oxidation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 18, 1999
Grant Date -
N/A
app pub date -
Dec 30, 1994
filing date -
Jan 8, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a source/drain doping step in manufacturing a field effect transistor, particularly a thin-film transistor (TFT), high-speed boron ions are implanted in a state that an active layer in which to form the source and drain is covered with an insulating film, whereas phosphorus ions are implanted in a state that the surface of the active layer is exposed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully