Laser diode and method for fabricating the same
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United States of America Patent
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May 28, 2002
Issued Date -
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app pub date -
Jul 26, 2000
filing date -
Aug 20, 1997
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Abstract
Provided with a laser diode and its fabricating method including the steps of: sequentially forming a first conductivity type clad layer, an active layer, a second conductivity type first clad layer, an etch stop layer, a second conductivity type second clad layer, a second conductivity type InGaP layer, and a second conductivity type GaAs layer, on a first conductivity type substrate; forming an insulating layer on the second conductivity type GaAs layer and patterning it, exposing a defined region of the second conductivity type GaAs layer; performing a reactive ion etching using the patterned insulating layer as a mask, etching the second conductivity type GaAs layer, the second conductivity type InGaP layer, and the second conductivity type second clad layer to a specified depth and remaining part of the second conductivity type second clad layer; forming a photoresist on the whole surface including the insulating layer and patterning it, exposing the residual second conductivity type second clad layer; performing a wet etching using the patterned photoresist as a mask to etch the second conductivity type second clad layer, exposing the etch stop layer and etching the residual photoresist and insulating layer; forming a current blocking layer on the exposed etch stop layer, and a second conductivity type contact layer on the whole surface including the current blocking layer; and forming electrodes on the second conductivity type contact layer and beneath the substrate, respectively.
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Family
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- LG ELECTRONICS INC.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Jang, Jun Ho | Kyungki-do, KR | 69 | 1042 |
Sung, Kang Hyun | Chungcheongbuk-do, KR | 1 | 1 |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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