Method for forming silicide
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United States of America Patent
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-
Dec 25, 2001
Grant Date -
N/A
app pub date -
Aug 11, 2000
filing date -
Aug 11, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming silicide on a semiconductor wafer. The semiconductor wafer includes a doped silicon layer on a predetermined area of the semiconductor wafer, a metal layer positioned on the doped silicon layer, and a barrier layer covering the metal layer. A first rapid thermal processing (RTP) step is performed to make portions of the metal layer react with silicon inside the doped silicon layer so as to form a transitional silicide. The barrier layer and the portions of the metal layer that have not reacted with silicon are then removed. A dielectric layer is formed on the transitional silicide. Finally, a second rapid thermal processing (RTP) step is performed to make the transitional silicide react with portions of the doped silicon layer so as to form the silicide.
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