Semiconductor device and manufacturing method of semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11935945
APP PUB NO 20210265492A1
SERIAL NO

17235954

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Abstract

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Provided is a semiconductor device, comprising: a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. An N-type region with an N-type conductivity is provided in the semiconductor substrate such that the N-type region includes the center position of the semiconductor substrate. The N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position of the semiconductor substrate.

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Patent Owner(s)

  • FUJI ELECTRIC CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Meguro, Misaki Matsumoto, JP 16 19
Nemoto, Michio Matsumoto, JP 44 683
Takishita, Hiroshi Matsumoto, JP 58 327
Yoshimura, Takashi Matsumoto, JP 145 1029

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