Magnetic tunnel junction structures and related methods

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United States of America Patent

PATENT NO 11605670
APP PUB NO 20200135804A1
SERIAL NO

16400626

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Abstract

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The disclosure is directed to spin-orbit torque MRAM structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.; NATIONAL TAIWAN UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, CheeWee Taipei, TW 14 39
Luo, Zong-You Taoyuan, TW 11 14
Tsou, Ya-Jui Taichung, TW 15 14
Tung, I-Cheng New Taipei, TW 32 31

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