Methods of forming a semiconductor device with a gate structure having a dielectric protection layer

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United States of America Patent

PATENT NO 11749753
SERIAL NO

16901680

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Abstract

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A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes a gate spacer over the semiconductor fin. A lower portion of the gate spacer surrounds a first region and an upper portion of the gate spacer surrounds a second region. The semiconductor device includes a gate dielectric within the first region. The semiconductor device includes a metal gate within the first region. The semiconductor device includes a dielectric protection layer, in contact with the gate dielectric layer, that includes a first portion within the second region and a second portion lining a top surface of the metal gate.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lian, Jian-Jou Tainan, TW 41 23
Lin, Chun-Neng Hsinchu County, TW 45 15
Yeh, Ming-Hsi Hsinchu, TW 138 499

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