Non-single-crystal solar cell
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United States of America Patent
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May 7, 2002
Grant Date -
N/A
app pub date -
Mar 15, 2000
filing date -
Mar 15, 1999
priority date (Note) -
Expired
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Abstract
The film thickness of a p-type semiconductor was adjusted in order to achieve 0.85-0.99 times the maximum pre-irradiation open-circuit voltage. In order to achieve 0.85-0.99 times the maximum pre-irradiation open-circuit voltage, it was also shown to be favorable to control acceptor impurity levels in p-type semiconductors. Irradiation conditions of more than 10 hours at 1 SUN or (light intensity [SUN]).sup.2.times.10 or more (time [h])>10 were utilized.
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