Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
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United States of America Patent
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Aug 2, 2005
Grant Date -
Aug 19, 2004
app pub date -
Feb 12, 2004
filing date -
Aug 16, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to release metal from the precursor, and subsequently the released metal is deposited over the semiconductor substrate. The invention also includes capacitor constructions, and methods of forming capacitor constructions.
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