Voltage applications to a memory cell including a resistance change memory element in series with a two-terminal switching element

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United States of America Patent

PATENT NO 11935591
APP PUB NO 20220406374A1
SERIAL NO

17549337

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Abstract

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According to one embodiment, a memory device includes a first wiring line, a second wiring line, a memory cell connected between the first and second wiring lines, including a resistance change memory element having first and second resistance states, and a two-terminal switching element connected in series to the resistance change memory element, and a voltage application circuit which applies a write voltage signal having a first polarity and setting a desired resistance state to the resistance change memory element, to the memory cell, and applies, after the write voltage signal is applied to the memory cell, a second polarity voltage signal having a magnitude that prevents the two-terminal switching element from being set to the on-state, to the memory cell.

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Patent Owner(s)

  • KIOXIA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Hiroshi Yokohama Kanagawa, JP 806 10499
Takahashi, Masahiro Yokohama Kanagawa, JP 466 6482
Takizawa, Ryousuke Naka Kanagawa, JP 31 212

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