Sputtering target and process for producing the same
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United States of America Patent
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Mar 18, 2008
Grant Date -
May 11, 2006
app pub date -
Feb 3, 2004
filing date -
Mar 4, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850.degree. C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.
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