CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure
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United States of America Patent
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Sep 2, 2008
Grant Date -
May 4, 2006
app pub date -
Jun 16, 2005
filing date -
Oct 29, 2004
priority date (Note) -
Expired
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Abstract
By predoping of a layer of deposited semiconductor gate material by incorporating dopants during the deposition process, a high uniformity of the dopant distribution may be achieved in the gate electrodes of CMOS devices subsequently formed in the layer of gate material. The improved uniformity of the dopant distribution results in reduced gate depletion and reduced threshold voltage shift in the transistors of the CMOS devices.
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