Semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 11817451
APP PUB NO 20210265339A1
SERIAL NO

16850023

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Abstract

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Some embodiments of the disclosure provide a semiconductor device. The semiconductor device includes: a doped substrate; a barrier layer, disposed on the doped substrate; a channel layer, disposed between the doped substrate and the barrier layer; and a doped semiconductor structure, disposed in the doped substrate, where a band gap of the barrier layer is greater than a band gap of the channel layer, and the doped substrate and the doped semiconductor structure have different polarities.

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Patent Owner(s)

  • INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
He, Chuan Zhuhai, CN 132 1793
Zhao, Qiyue Zhuhai, CN 31 9

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