Ligand-modified quantum dot composition, ligand-modified quantum dot layer, preparation methods thereof, quantum dot light emitting diode

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United States of America Patent

PATENT NO 11453820
APP PUB NO 20200332181A1
SERIAL NO

16305712

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A ligand-modified quantum dot composition, a ligand-modified quantum dot layer, preparation methods thereof, and a quantum dot light emitting diode are provided. Segment B of the ligand modifier in the ligand-modified quantum dot composition is a chain-cleavable segment, that is, segment B is a longer molecular chain, so that the material has good solubility and stability, thus the ligand-modified quantum dot composition is present in the form of a solution or ink, etc. Segment B itself is not very stable and may be cleaved under certain conditions. In specific applications, the group in segment B may be cleaved by heating or illumination, so that the ligand modifier becomes a short molecular chain ligand, thereby making the quantum dots densely stack and improving the carrier transfer performance.

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Patent OwnerAddress
BEIJING BOE TECHNOLOGY DEVELOPMENT CO LTD100176 ROOM 407 BUILDING 1 NO 9 DIZE ROAD BEIJING ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE DAXING DISTRICT BEIJING BEIJING CITY BEIJING CITY 100176

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Inventor Name Address # of filed Patents Total Citations
Zhang, Zhenqi Beijing, CN 21 17

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