Semiconductor device having damascene interconnection structure that prevents void formation between interconnections
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United States of America Patent
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Jun 4, 2002
Grant Date -
Mar 28, 2002
app pub date -
Jun 10, 1999
filing date -
Jun 11, 1998
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.
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