Semiconductor device and operation method thereof

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United States of America Patent

PATENT NO 11963343
APP PUB NO 20230127474A1
SERIAL NO

17892190

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Abstract

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A semiconductor device capable of obtaining the threshold voltage of a transistor is provided. The semiconductor device includes a first transistor, a first capacitor, a first output terminal, a first switch, and a second switch. A gate and a source of the first transistor are electrically connected to each other. A first terminal of the first capacitor is electrically connected to the source. A second terminal and the first output terminal of the first capacitor are electrically connected to a back gate of the first transistor. The first switch controls input of a first voltage to the back gate. A second voltage is input to a drain of the first transistor. The second switch controls input of a third voltage to the source.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Atsumi, Tomoaki Kanagawa, JP 126 1876
Honda, Ryunosuke Kanagawa, JP 15 51
Kunitake, Hitoshi Kanagawa, JP 63 20

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