Metal-insulator-metal capacitor structure
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United States of America Patent
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Jun 29, 2010
Grant Date -
Dec 3, 2009
app pub date -
May 29, 2008
filing date -
May 29, 2008
priority date (Note) -
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Abstract
A metal-insulator-metal capacitor structure includes a lower electrode, a buffer layer, a barrier layer, a dielectric layer and an upper electrode. The lower electrode is disposed in the buffer layer. The barrier layer covers part of the lower electrode and is disposed between the lower electrode and the upper electrode. The buffer layer serves as an etching stop layer to define the dielectric layer. The dielectric layer in the metal-insulator-metal capacitor structure has a uniform and ideal thickness.
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