CMOS image sensor and method for manufacturing the same
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United States of America Patent
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May 15, 2007
Grant Date -
Mar 24, 2005
app pub date -
Dec 23, 2003
filing date -
Sep 22, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the same laminate structure as the gates of the transistors. Impurities for a diffusion region of the photodiode are ion-implanted into the active region for the photodiode, after the laminate structure is formed. The passivation layer prevents the edge portion from being damaged by ion implantation at the boundary or interface between the photodiode diffusion region and an isolation layer, which reduces dark current and/or leakage current of the CMOS image sensor.
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