Method to increase wafer utility by implementing deep trench in scribe line
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United States of America Patent
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Apr 10, 2001
Grant Date -
N/A
app pub date -
Apr 15, 1999
filing date -
Apr 15, 1999
priority date (Note) -
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Abstract
A method that teaches the formation of deep trenches within the surface of a semiconductor wafer, these deep trenches are used to separate the wafer into individual chips by applying stress to the wafer. The formation of the deep trenches uses exposing a thick layer of photoresist followed by etching. The etching is a two step etch, a stabilization etch and a main etch. The stress used to separate the wafer into individual chips can be invoked by applying physical force to the wafer.
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