Tantalum silicon oxynitride high-k dielectrics and metal gates
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United States of America Patent
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Aug 17, 2010
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Aug 31, 2006
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Aug 31, 2006
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Abstract
Electronic apparatus and methods of forming the electronic apparatus include a tantalum silicon oxynitride film on a substrate for use in a variety of electronic systems. The tantalum silicon oxynitride film may be structured as one or more monolayers. The tantalum silicon oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a tantalum silicon oxynitride film.
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