Method of making a fully-dielectric-isolated fet
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United States of America Patent
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Jun 30, 1998
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Jun 7, 1995
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Feb 28, 1995
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Abstract
A field-effect transistor structure wherein a single patterned thin film semiconductor layer: is monocrystalline, and epitaxially matched to and dielectrically isolated from an underlying body region, in channel locations; and is polycrystalline in source/drain locations which abut said channel locations.
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