Broadband power transistor devices and amplifiers with output T-match and harmonic termination circuits and methods of manufacture thereof

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United States of America Patent

PATENT NO 11705872
APP PUB NO 20210175860A1
SERIAL NO

17111913

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

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Patent Owner(s)

  • NXP USA, INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Holmes, Damon G Scottsdale, US 31 225
Jones, Jeffrey Kevin Chandler, US 27 96
Lembeye, Olivier Saint Lys, FR 17 53
Roberts, Jeffrey Spencer Tempe, US 13 56
Zhu, Ning Chandler, US 125 1484

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