Technique and apparatus for depositing thin layers of semiconductors for solar cell fabrication
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United States of America Patent
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May 20, 2008
Grant Date -
Sep 15, 2005
app pub date -
Mar 15, 2005
filing date -
Mar 15, 2004
priority date (Note) -
Expired
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Abstract
The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. In one embodiment, there is provided a method of growing a Group IBIIIAVIA semiconductor layer on a base, and includes the steps of depositing on the base a film of Group IB material and at least one layer of Group IIIA material, intermixing the film of Group IB material and the at least one layer of Group IIIA material to form an intermixed layer, and forming over the intermixed layer a metallic film comprising at least one of a Group IIIA material sub-layer and a Group IB material sub-layer. Other embodiments are also described.
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