Method for manufacturing semiconductor device
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United States of America Patent
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Aug 14, 2001
Grant Date -
N/A
app pub date -
Jun 7, 1999
filing date -
Jun 30, 1998
priority date (Note) -
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Abstract
A method for manufacturing a semiconductor device includes the steps of: forming an interlayer dielectric film on a silicon substrate having a diffusion layer formed in one-side surface thereof; forming at least one contact hole in the interlayer dielectric film; forming a first high melting-point metal film and a first high melting-point metal nitride film on the surface of the contact hole in this order as a barrier metal; thermal treatment for improvement of a barrier property of the first high-melting point metal nitride film; and forming a second high melting-point metal nitride film, a second high melting-point metal film, and an aluminum-containing wiring film to fill the contact hole in this order in the same atmosphere.
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