Artificial neural networks (ANN) including a resistive element based on doped semiconductor elements

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United States of America

PATENT NO 11227996
APP PUB NO 20190198761A1
SERIAL NO

16288533

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Abstract

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A resistive element in an artificial neural network, the resistive element includes a Silicon-on-insulator (SOI) substrate, and a Silicon layer formed on the Silicon-on-insulator substrate. The Silicon layer includes dopants derived from a thin film dopant layer, and the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Afzali-Ardakani, Ali Ossining, US 281 3228
Copel, Matthew Warren Yorktown Heights, US 15 264
Hannon, James Bowler Lake Lincolndale, US 7 180
Oida, Satoshi Yorktown Heights, US 21 144

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