Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry

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United States of America Patent

PATENT NO 6410347
SERIAL NO

09395032

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Abstract

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The method of manufacturing VCSEL composed of multiple material layers uses a main measuring laser having same wavelength of that of VCSEL so as to estimate the growth periods required for growing a predetermined thickness of the material layers by analyzing the reflected signal of the main measuring laser and then control the growth time durations of subsequent material layers. This method eliminates the need of pre-knowledge of refractive indexes and the growing speeds of the material layers. Also, an interruptive process for measuring thickness, growth speed or refractive indexes can be omitted so as to perform the entire epitaxial growth in-situ and thus improve the reproducibility and the uniformity. In addition, a subsidiary measuring laser may be used other than the main measuring laser for improving the accuracy of the control of growth time duration, where the subsidiary measuring laser has a different wavelength from that of VCSEL. The subsidiary measuring laser may be used especially in the case of fabricating the VCSEL without any buffer layer.

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Patent Owner(s)

  • ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baek, Jong Hyeob Taejon, KR 6 31
Lee, Bun Taejon, KR 14 64

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