Method of manufacturing semiconductor device having field plate electrode
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United States of America Patent
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Mar 3, 2015
Grant Date -
Sep 25, 2014
app pub date -
Sep 10, 2013
filing date -
Mar 22, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
According to one embodiment, in a method of a semiconductor device, a trench is formed in the direction of a lower surface from an upper surface of a semiconductor layer. A first insulating film is formed to cover an inner surface of the trench. An electrode material is formed to fill the trench and cover the upper surface of the semiconductor layer. The electrode material is selectively removed except a portion of the electrode material to fill the trench and a portion of the electrode material to cover an opening of the trench. The first insulating film to cover an upper portion of the trench is removed. The portions of the electrode material to fill the trench and cover the opening of the trench are etched back to form a first electrode at a lower portion of the trench.
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